SemiHow Technology was founded in 2002 as a power semiconductor company, focusing on engineers who have over 10 years of experience in power semiconductor design, Fab process technology, and Fab production technology at Samsung Semiconductor.

SemiHow Technology signed a Technical Support and OEM Agreement with China Resources Microelectronics Co., Ltd. in 2004 to support the Planar mosfet process technology of China Resources Microelectronics. SemiHow also produced OEM wafers at China Resources Microelectronics and developed and launched HV MOSFETs in 2005. The first mass-produced high-voltage MOSFET from South Korea and China entered the Chinese and South Korean markets.

Afterwards, SemiHow collaborated with domestic contract manufacturing companies such as FMIC, Skysilicon, and Huahong Hongli to continuously launch low-voltage trench MOSFETs, thyristors, bidirectional thyristors, NPT IGBTs, shielded gate trench MOSFETs, and super junction MOSFET products.

And it has been recognized with world-class technology in the markets of mobile chargers, adapters, consumer electronics, PCs, EV chargers, networks, servers, LED lighting, and more.

In 2018, SemiHow Technology signed a strategic partnership with Samsung foundries ("SF") to develop and produce Power Discrete products on the SF 8-inch production line. In 2019, as the first development series, we developed over 110 products (600-900 volts) of super junction S3 MOSFET (Rsp18 level) and planar MOSFET 800900 volts.

Subsequently, the development of FS (Field Stop) IGBT, SGT MOSFET, and Gen2 SJMOSFET was continuously promoted. In 2023, we launched "Q4 FS IGBT, SGT MOSFET" products, and in 2024, we plan to launch "Q1 Gen2 SJ MOSFET" and "Q2 IGBT power module" products.

Starting from 2020, more than 80% of SemiHow's power discrete products will be produced by SF 8-inch wafer fabs and Synergy Power. With SemiHow's 20-year global technological competitiveness, Know How, and four major competencies (wafer fab capacity, quality, delivery time, and cost), SF 8 inch lines can meet the needs of any customer.

Development history:

2023

·Complete the development of 1200V level IGBT.

·The headquarters will be expanded and relocated to Qingluo, Incheon.

2022

·Approve all IGBT models in the Cuckoo Electronics induction series for 650V and 1400V levels.

·Recognized by the Ministry of Industry, Commerce, and Resources as the $10 million export champion.

·The world's largest mining machine company, BitContinent, has been approved as one of the first suppliers.

·Asus ATX Power has obtained supply approval.

2021

·Complete the development of IGBT for 650V and 1400V levels.

·Commendation from the Minister of Small and Medium Enterprises and startups.

In 2020

·Start developing field cutoff IGBTs in SF for 650V and 1400V levels.

In 2019

·Samsung's 8-inch factory ("SF") has developed 110 products exceeding Super Junction ("SJ") MOSFET 600-900V.

·Transplant SemiHow shielded gate trench ("SGT") MOSFET process and ordinary low-voltage trench ("LVT") MOSFET process to SF 8-inch wafer fab.

2018

·Signed a contract with the SF business unit to transplant SemiHow Process technology to the SF 8-inch factory and produce SemiHow SJ MOSFET, SGT MOSFET, Planar MOSFET, and FS IGBT products at SF.

·Complete the migration of SemiHow SJ MOSFET process (Epi Stack technology) and Planar MOSFET 800900V to SF 8-inch factory.

·The SJ MOSFET product developed by SF 8-inch factory has been recognized and delivered by Samsung's mobile department.

In 2016

·Samsung Super Junction MOSFET Mobile Charger Sales Exceeded $5 million

2015, 2016

·Supply approximately 110 million 700V SJ MOSFETs for Samsung Galaxy series chargers.

In 2014

·Developed 700v SJ MOSFET using deep groove technology and approved for use in Samsung Galaxy S5 and Note4 chargers.

2012

·The high-voltage MOSFET products of Samsung Galaxy series chargers and Triac products for washing machine applications have been recognized.

·Developing thyristors (Triac, SCR)

November 2010

·Develop Power Switch MCP (PWM IC+MOSFET) and PFC IC in DB Hitech 8-inch Fab. Developing Soc (PWM IC+MOSFET) using Canadian Dalsa BCDMOS 8-inch process

September 10, 2008

·Develop Gen2, Gen3, and Gen4 Planar MOSFETs at Guoyu, Central, and FMIC 6-inch factories. (SemiHow&# 39; Process/Production Technology Migration) 2007

·Registered as a separate power supplier for Samsung Electronics and major clients in China/South Korea.

·Achieved sales of 15 million US dollars.

In 2004

·Developed high-voltage (500-900V) planar MOSFETs at the 5-inch factory of China Resources Microelectronics Co., Ltd. (SemiHow&# 39; Process/Production Technology Migration)

In 2003

·Developed power BJT (bipolar junction transistor) 700Volt 13005,7,9 for PC power supply applications at Huashan Electronics 4-inch factory. (SemiHow&# 39; Process/Production Technology Transplantation) 2002

In 2002

·SemiHow established